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PhD: Device Physics & Compact Modelling of Bipolar Transistors

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► PhD: Device Physics & Compact Modelling of Bipolar Transistors

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Department/faculty: Electrical Engineering, Mathematics and Computer Science
Level: Master degree
Working hours: Maximum of 38 hours per week (1 FTE)
Contract: Four years
Salary: Maximum of €2558 per month gross
The Faculty of Electrical Engineering, Mathematics and Computer Science is an ambitious research and learning environment offering many opportunities for synergistic collaboration. The faculty is a strong international player in the fields of Telecommunications, Software Technology, Micro-electronics and Computer Engineering, Electrical Energy Technology, Multimedia and Applied Mathematics. The faculty brings together 1,800 students (BSc and MSc) and a staff of 750, including nearly 300 PhD researchers.
The Laboratory of Electronic Components, Technology and Materials (ECTM) is part of the Department of Microelectronics and offers a multidisciplinary research environment with strong industry interaction.
The Semiconductor Device Modelling section focuses on physics-based modelling of semiconductor devices. A central activity is the support and development of the World Standard model Mextram for bipolar transistors. Mextram is widely used in the semiconductor industry to support electronic circuit simulations. In our group, starting from physical principles and experimental data, we are developing an understanding of how electronic devices work in order to explain and model their electrical characteristics.


Bipolar transistors are the active devices of choice for advanced radio-frequency applications, such as upcoming telecommunication generations, radar and advanced THz imaging systems. In these applications, most advanced bipolar transistors will be applied. The study of these advanced electronic devices opens a myriad of topics in semiconductor device physics. The focus of the research will be on understanding and modelling hetero-junction structures applied in advanced transistors, as well as on the consequences of downscaling the bipolar devices, which, thanks to progress in modern semiconductor device technology, are entering the domain of nano-electronics.


The candidate has an academic MSc degree in physics, electrical engineering, applied mathematics or the equivalent. The candidate has an affinity with semiconductor device physics and for the combination of experimental work with mathematical analysis and modelling.


The successful candidate will be employed by Delft University of Technology for a fixed period of 4 years within which he/she is expected to write a doctoral thesis. The estimated starting salary for the PhD student is € 2,000 per month gross, with a maximum of € 2,558 gross (based on a full-time appointment and depending on experience).

TU Delft offers an attractive benefits package, including a flexible work week, free high-speed Internet access from home, and the option of assembling a customized compensation and benefits package (the 'IKA'). Salary and benefits are in accordance with the Collective Labour Agreement for Dutch Universities.

Delft University of Technology strives to increase the number of women in higher academic positions; women are therefore especially encouraged to apply.


For more information about this position, please contact Ramses van der Toorn, phone: +31 (0)15-2787281, e-mail: To apply, please send a detailed CV along with a letter of application by October 1, 2008 to Mekelweg 4, 2628 CD Delft, the Netherlands, or by e-mail to:
When applying for this position, make sure to mention vacancy number EWI2008-22.
Enquiries from agencies are not appreciated.
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